Method and apparatus for etching substrates with a...

C - Chemistry – Metallurgy – 23 – C

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204/96.05, 204/1

C23C 14/34 (2006.01) H01J 37/32 (2006.01)

Patent

CA 2002322

ABSTRACT OF THE DISCLOSURE The invention relates to a method and apparatus for etching substrates with a magnetic-field-supported, low-pres- sure discharge. The etching is performed as a preliminary treatment of the substrates for a subsequent coating. In this method, the magnetic field is decoupled from the sub- strates such that the magnetic field strength at the substrates is less than 6000 A/m and in the space between the substrates and the magnet system at least one electron emitter is disposed at a location at which a magnetic field strength is present that is greater than the field strength at the substrates but equal to or less than 12000 A/m. On the side of the substrates facing away from the electron emitter, at least one anode is disposed with an anode poten- tial of +10 to +250 V with respect to ground. An etching potential between -100 V and -1000 V with respect to ground is applied to the substrates and the ratio of the gaps between the substrates and the surfaces of the substrates projected onto a projection plane carried through the gaps amounts to at least 0.1. The potential difference between the at least one emitter and the at least one anode is selected so high that an electron current (primary and secon- dary electrons) flows through the substrate gaps to the anode. With this method and apparatus a high etching rate can be achieved with minimal edge damage and sufficient adhe- sion rendering it particularly useful for tools having cutting edges and/or sharp edge geometries.

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