H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/147
H01L 21/42 (2006.01) H01J 37/304 (2006.01) H01J 37/317 (2006.01)
Patent
CA 1166362
A B S T R A C T An electron-beam array lithography (EBAL) system and method of operation is described, employing an electron beam column of the array optics type having an array lens assembly, an array fine deflector assembly and a coarse deflector assembly for selectively directing an electron beam to a desired element of the array of lenslets and its associated element of the array of fine deflectors, where one or more of the lenslets in the array may be flawed. The method and system further comprises deriving fiducial marking signals from a lenslet stitching grid of fiducial elements, formed on a stan- dard stitching target, for calibrating the boundaries of the fields of view of the respective elements of the array of lenslets. The fiducial marking sig- nals are used to stitch together the individual fields of view of the elements in the array of lenslets in order to cover a desired area of a workpiece sur- face to be subsequently exposed to the electron beam, for example, the surface of a semiconductor wafer upon which a plurality of integrated circuit chips are to be formed. In the event of flawed lenslets in the array lens, the locations of those parts of the exposed area which were subject to the fields of view of flawed lenslets in the array lens assembly are mapped in a computer memory and this information is used to blank the electron beam during any period that the coarse deflector might be directing the beam to a flawed lenslet. The system and method then physically permutes the position of the exposed target area to a net physical position subject to the field of view of a different array of lenslets. Appropriate coarse and fine deflection signals are then obtained from the flawed lenslets, and the electron beam is then caused to retrace over these areas in accordance with the master pattern specifications for this area an the target surface whereby increased yield from the EBAL system is obtained.
399901
Harte Kenneth J.
Smith Donald O.
Control Data Corporation
Smart & Biggar
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