Method and apparatus for fabricating devices with dc...

Details Method and apparatus for fabricating devices with dc... Method and apparatus for fabricating devices with dc...

H - Electricity

01

L

356/177

H01L 21/02 (2006.01) H01J 37/32 (2006.01)

Patent

CA 1211867

- 23 - METHOD AND APPARATUS FOR FABRICATING DEVICES WITH DC BIAS-CONTROLLED REACTIVE ION ETCHING Abstract A method and apparatus for fabricating a device is disclosed, which involves a new reactive ion etching technique. Both a high etch rate and, for example, a high etch selectivity are simultaneously achieved with the inventive reactive ion etching technique by discharging an electrode of the reactive ion etching apparatus in response to a preselected criterion, e.g., a magnitude of a DC bias at said electrode which equals, or exceeds, a preselected value.

465202

Affiliated with

Also associated with

Rating

Method and apparatus for fabricating devices with dc... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for fabricating devices with dc..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for fabricating devices with dc... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1276114