Method and apparatus for forming a silicon wafer

Details Method and apparatus for forming a silicon wafer Method and apparatus for forming a silicon wafer

C - Chemistry, Metallurgy

30

B

C30B 15/00 (2006.01) C30B 33/00 (2006.01)

Patent

CA 2661324

A furnace for growing a ribbon crystal has a channel for growing a ribbon crystal at a given rate in a given direction, and a separating mechanism for separating a portion from the growing ribbon crystal. At least a part of the separating mechanism moves at about the given rate and in about the given direction while separating the portion from the growing ribbon crystal.

La présente invention concerne un four, destiné à faire croître un ruban de cristal, qui comprend un canal, qui permet de croître un ruban de cristal à une vitesse donnée dans une direction donnée, et un mécanisme de séparation qui permet de séparer une partie du ruban de cristal croissant. Une partie au moins du mécanisme de séparation se déplace à une vitesse donnée dans une direction donnée tout en détachant la partie du ruban de cristal croissant.

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