C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
204/109, 204/96.
C23C 14/46 (2006.01) C23C 14/00 (2006.01) C23C 14/22 (2006.01) C30B 25/02 (2006.01)
Patent
CA 1308689
ABSTRACT OF THE DISCLOSURE Method and apparatus for forming a thin film. A beam of electrons is generated, by heating a filament, and electrostatically attracted toward a charged electrode. This beam activates reactive gases by irradiation thereof, in a relatively low vacuum. The reactive gases are directed toward a substrate disposed in a relatively high vacuum. Vapors are formed including (i) atomic clusters and (ii) non- clustered atomic particles of a material that is to be deposited on the substrate. (i) and (ii) are partially ionized to form (iii) cluster ions and (iv) non-clustered ions, respectively. Simultaneously the activated reactive gases and (i), (ii), (iii) and (iv) are directed toward the substrate which is surrounded with the activated reactive gases. (i), (ii), (iii) and (iv) are reacted with the activated reactive gases to deposit a thin film on the substrate. A high quality thin film is deposited by the method and apparatus of the invention.
550340
Marks & Clerk
Mitsubishi Denki Kabushiki Kaisha
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