Method and apparatus for forming films from vapors using a...

B - Operations – Transporting – 05 – D

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

204/96.3

B05D 3/14 (2006.01) C23C 14/00 (2006.01) C23C 14/32 (2006.01) C23C 16/507 (2006.01) H01L 31/0216 (2006.01) H01L 31/18 (2006.01)

Patent

CA 1146909

ABSTRACT OF THE DISCLOSURE Method for forming mixed oxide and/or nitride films upon the surface of an article by the use of a partially confined plasma-activated source. The plasma-activated source has a cavity in which an RF field is formed within the cavity to create a gas plasma in the cavity as gas is introduced into the cavity. The gas plasma is caused to exit from the cavity to impinge upon the surface of the article to be coated. At least one of the constituents of the film is selected as a compound vapor and is chemically reacted with at least one other constituent by utilization of the gas plasma to form the thin film on the surface of the article while the article is maintained at a low temperature. A chemical reaction takes place within the cavity itself and/or alternatively at the surface to be coated for the formation of the films.

349891

LandOfFree

Say what you really think

Search LandOfFree.com for Canadian inventors and patents. Rate them and share your experience with other people.

Rating

Method and apparatus for forming films from vapors using a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for forming films from vapors using a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for forming films from vapors using a... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFCA-PAI-O-362438

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.