Method and apparatus for growing hg12 crystals

Details Method and apparatus for growing hg12 crystals Method and apparatus for growing hg12 crystals

C - Chemistry, Metallurgy

30

B

148/1.5

C30B 15/00 (2006.01) C30B 23/00 (2006.01)

Patent

CA 1060762

ABSTRACT OF THE DISCLOSURE An improved method and apparatus for growing mercuric iodide (HgI2) crystals which combines known vapor growth techniques to produce larger, more uniform, and higher perfection crystals for use in X-ray, nuclear, or other radiation detectors. The improved method combines the following individual crystal growth techniques: (a) growth at low supersaturations and/or undercooling, .DELTA.T; (b) pulling the crystal so that the pulling rate is equal to growth rate in the gradient and the crystal thus grows at a constant .DELTA.T; and (c) oscillating the temperature of the source TS between TS1 > TC and TS2 < TC where TC is the temperature of the growing crystal.

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