Method and apparatus for increasing the durability and yield...

H - Electricity – 01 – L

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356/198, 345/22,

H01L 31/04 (2006.01) G01R 31/26 (2006.01) H01L 31/18 (2006.01)

Patent

CA 1207069

Abstract of the Disclosure This invention relates to a method and apparatus for detecting the location of shorting defects in thin film semiconductor layers. Thin film photovoltaic cells having a pair of semiconductor layers between opaque and a transparent electrical contacts are manufactured in a method which includes the step of scanning one of the semiconductor layers to determine the location of any possible shorting defect. Upon the detection of such defect, the defect is eliminated to increase the durability and yield of the photovoltaic device.

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