H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/22 (2006.01) H01L 21/77 (2006.01) H01C 17/242 (2006.01)
Patent
CA 2277607
The invention relates to a method of iteratively, selectively tuning the impedance of integrated semiconductor devices, by modifying the dopant profile of a region of low dopant concentration by controlled diffusion of dopants from one or more adjacent regions of higher dopant concentration through the melting action of a focussed heating source, for example a laser. In particular the method is directed to increasing the dopant concentration of the region of lower dopant concentration, but may also be adapted to decrease the dopant concentration of the region.
Gagnon Yves
Meunier Michel
Savaria Yvon
Cadeka Microcircuits Llc
Gagnon Yves
Meunier Michel
Perry + Currier
Savaria Yvon
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