Method and apparatus for iteratively, selectively tuning the...

H - Electricity – 01 – L

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

H01L 21/22 (2006.01) H01L 21/77 (2006.01) H01C 17/242 (2006.01)

Patent

CA 2277607

The invention relates to a method of iteratively, selectively tuning the impedance of integrated semiconductor devices, by modifying the dopant profile of a region of low dopant concentration by controlled diffusion of dopants from one or more adjacent regions of higher dopant concentration through the melting action of a focussed heating source, for example a laser. In particular the method is directed to increasing the dopant concentration of the region of lower dopant concentration, but may also be adapted to decrease the dopant concentration of the region.

LandOfFree

Say what you really think

Search LandOfFree.com for Canadian inventors and patents. Rate them and share your experience with other people.

Rating

Method and apparatus for iteratively, selectively tuning the... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for iteratively, selectively tuning the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for iteratively, selectively tuning the... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFCA-PAI-O-1359184

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.