Method and apparatus for iteratively, selectively tuning the...

Details Method and apparatus for iteratively, selectively tuning the... Method and apparatus for iteratively, selectively tuning the...

H - Electricity

01

L

H01L 27/00 (2006.01) H01C 17/242 (2006.01) H01L 21/22 (2006.01) H01L 21/77 (2006.01) H01L 29/36 (2006.01)

Patent

CA 2671386

The invention relates to a method of iteratively, selectively tuning the impedance of integrated semiconductor devices, by modifying the dopant profile of a region of low dopant concentration by controlled diffusion of dopants from one or more adjacent regions of higher dopant concentration through the melting action of a focussed heating source, for example a laser. In particular the method is directed to increasing the dopant concentration of the region of lower dopant concentration, but may also be adapted to decrease the dopant concentration of the region.

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