Method and apparatus for low energy electron enhanced...

Details Method and apparatus for low energy electron enhanced... Method and apparatus for low energy electron enhanced...

H - Electricity

01

L

H01L 21/18 (2006.01) B08B 7/00 (2006.01) C23F 4/00 (2006.01) C23F 13/16 (2006.01) H01J 37/32 (2006.01) H01L 21/3065 (2006.01) H05H 1/46 (2006.01)

Patent

CA 2353490

A method of low-damage, anisotropic etching of substrates including mounting the substrate upon the anode in a DC plasma reactor and subjecting the substrate to a plasma of low-energy electrons and a species reactive with the substrate. An apparatus for conducting low-damage, anisotropic etching including a DC plasma reactor, a permeable wall hollow cold cathode, an anode, and means for mounting the substrate upon the anode.

Procédé servant à effectuer la gravure anisotrope sans risques de substrats et consistant à monter le substrat sur l'anode d'un réacteur au plasma à courant continu et à soumettre le substrat à un plasma d'électrons basse énergie et à une espèce réactive avec le substrat. Dispositif servant à effectuer la gravure anisotrope sans risques et comprenant un réacteur au plasma à courant continu, une cathode froide creuse à paroi perméable, une anode et des moyens servant à monter le substrat sur l'anode.

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