Method and apparatus for low pressure chemical vapor deposition

Details Method and apparatus for low pressure chemical vapor deposition Method and apparatus for low pressure chemical vapor deposition

C - Chemistry, Metallurgy

23

C

32/24, 117/86

C23C 16/22 (2006.01) C23C 16/44 (2006.01) C23C 16/448 (2006.01) C23C 16/54 (2006.01)

Patent

CA 1276512

Abstract Of The Disclosure A method of introducing a controlled flow of vapor from a high pressure sublimation chamber into a low pressure vapor deposition reactor, said vapor being derived from solid source material preferably, but not necessarily, having a vapor pressure above about one (1) Torr at a temperature not exceeding about 350°C. The method comprises controllably heating the source material to a temperature sufficient to produce vapor therefrom at a desired pressure, and then con- trollably transferring the vapor through vapor transmission means to the vapor deposition reactor. During such transfer, the transmission means is maintained at a temperature sufficient to prevent con- densation of the vapor therein during transfer. The vapor is delivered to the reactor in a pure state and is not mixed with any carrier medium.

499948

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