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Patent
G - Physics
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Patent
CA 2150502
A temperature sensor including integrated thin film silicon or polysilicon resistors that are doped with selected concentrations of impurities such as Boron, Phosphorus, Arsenic or Antimony. The type and amount of dopant for the selected resistors are chosen so as to establish a predetermined temperature coefficient in at least some of the resistors so that the resistors exhibit a predetermined temperature dependence. This temperature dependence is utilized within the circuit of the temperature sensor to create a temperature sensor that is stable, accurate, and rugged and that has a generally linear output to temperature response.
Mattes Michael F.
Seefeldt James
Sim & Mcburney
Ssi Technologies Inc.
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