Method and apparatus for monolithic optoelectronic...

Details Method and apparatus for monolithic optoelectronic... Method and apparatus for monolithic optoelectronic...

H - Electricity

01

L

H01L 27/14 (2006.01) H01L 27/144 (2006.01) H01L 31/18 (2006.01)

Patent

CA 2225930

A monolithic Optoelectronic Integrated Circuit including a photodiode and a CMOS readout circuit is described in which the diode is formed by compositionally graded layers of In x Ga1-x As selectively epitaxially grown between a substrate of Si and an absorption layer of In x Ga1-x As, the areas of said layers being less than 500 µm2 and wherein a readout circuit on said substrate is coupled to said diode.

Circuit intégré opto-électronique monolithique comprenant une photodiode (4) et un circuit CMOS de lecture (6). La diode est formée d'InGaAs (28) classé selon sa composition et subissant une croissance épitaxiale sélective entre un substrat de Si (16) et une couche d'absorption d'InGaAs (22), les surfaces de ces couches étant inférieures à 500 mu <2> et un circuit de lecture (6') du substrat étant couplé à la diode.

Affiliated with

Also associated with

Rating

Method and apparatus for monolithic optoelectronic... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for monolithic optoelectronic..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for monolithic optoelectronic... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-2014411