G - Physics – 01 – R
Patent
G - Physics
01
R
356/118
G01R 31/26 (2006.01) G01N 21/17 (2006.01) G01R 31/265 (2006.01) G01N 21/63 (2006.01) G01N 21/95 (2006.01)
Patent
CA 1243418
- 11 - METHOD AND APPARATUS FOR OPTICALLY DETERMINING DEFECTS IN A SEMICONDUCTOR MATERIAL Abstract Individual defects in or near the surface of a silicon wafer are detected by directing a time-modulated laser beam, having an energy level above the bandgap energy of the silicon material, towards the wafer. The beam is focused to a one to two micron spot on the wafer surface to photoexcite (i.e., pump) a high density of electrons and holes which changes the infrared reflectance in the area of the pumped spot. A probe beam of infrared radiation is directed at the surface (0.126 square mm in area) of the substrate and at a small angle thereto and the reflection thereof monitored by a detector. The pumped spot is raster scanned within the area of the probe beam spot. The detector detects only that portion of the intensity of reflected probe beam that is modulated by the pump beam frequency to create a video display having a high spatial resolution showing individual defects.
514983
American Telephone And Telegraph Company
Kirby Eades Gale Baker
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