Method and apparatus for performing growth of compound thin...

Details Method and apparatus for performing growth of compound thin... Method and apparatus for performing growth of compound thin...

H - Electricity

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H01L 21/363 (2006.01) C23C 16/30 (2006.01) C23C 16/40 (2006.01) C23C 16/455 (2006.01) C30B 25/02 (2006.01) C23C 16/44 (2006.01)

Patent

CA 1166937

ABSTRACT OF THE DISCLOSURE: A method and an apparatus are provided for performing growth of compound thin films by alternately repeating separate surface reactions of the substances comprising the compound. A carrier gas affects a diffusion barrier between the surface reac- tion steps to be separated from each other. The gas phase dif- fusion barrier is also applied to separate the source regions of different reacting vapors both from each other and from the sur- face reaction zone.

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