C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
C30B 29/04 (2006.01) C23C 4/12 (2006.01) C23C 16/27 (2006.01) C23C 16/458 (2006.01) C23C 16/513 (2006.01)
Patent
CA 2102781
The disclosure is directed to a plasma jet depsosition method and ap- paratus for depositing a substance, such as synthetic diamond. A plasma beam (225) containing constituents of the substance to be deposited is pro- duced. A substrate (150) is provided, and has a surface in the path of the beam, the area of said surface being substantially larger than the cross-sec- tional area of the beam impinging on the surface. Repetitive motion is in- troduced between the substrate and the beam as the substance is deposited on the surface. The substrate in a plasma jet deposition system can be pro- vided with structural attributes, such as apertures (170) and/or grooves (168), that facilitate efficient deposition. Groups of substrates (610, 620, 630 and 640) can be arranged with surfaces generally along the envelope of plasma beam to facilitate efficient deposition.
Cann Gordon L.
Mckevitt Frank X.
Shepard Cecil B. Jr.
Celestech Inc.
Goudreau Gage Dubuc
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