Method and apparatus for plasma deposition

C - Chemistry – Metallurgy – 23 – C

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C23C 4/12 (2006.01) C30B 29/04 (2006.01)

Patent

CA 2443497

The disclosure is directed to a plasma jet deposition method and apparatus for depositing a substance, such as synthetic diamond. A plasma beam (225) containing constituents of the substance to be deposited is produced. A substrate (150) is provided, and has a surface in the path of the beam, the area of said surface being substantially larger than the cross-sectional area of the beam impinging on the surface. Repetitive motion is introduced between the substrate and the beam as the substance is deposited on the surface. The substrate in a plasma jet deposition system can be provided with structural attributes, such as apertures (170) and/or grooves (168), that facilitate efficient deposition. Groups of substrates (610, 620, 630 and 640) can be arranged with surfaces generally along the envelope of plasma beam to facilitate efficient deposition.

LandOfFree

Say what you really think

Search LandOfFree.com for Canadian inventors and patents. Rate them and share your experience with other people.

Rating

Method and apparatus for plasma deposition does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for plasma deposition, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for plasma deposition will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFCA-PAI-O-2005882

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.