C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
C23C 4/12 (2006.01) C30B 29/04 (2006.01)
Patent
CA 2443497
The disclosure is directed to a plasma jet deposition method and apparatus for depositing a substance, such as synthetic diamond. A plasma beam (225) containing constituents of the substance to be deposited is produced. A substrate (150) is provided, and has a surface in the path of the beam, the area of said surface being substantially larger than the cross-sectional area of the beam impinging on the surface. Repetitive motion is introduced between the substrate and the beam as the substance is deposited on the surface. The substrate in a plasma jet deposition system can be provided with structural attributes, such as apertures (170) and/or grooves (168), that facilitate efficient deposition. Groups of substrates (610, 620, 630 and 640) can be arranged with surfaces generally along the envelope of plasma beam to facilitate efficient deposition.
Cann Gordon L.
Mckevitt Frank X.
Shepard Cecil B. Jr.
Celestech Inc.
Goudreau Gage Dubuc
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