Method and apparatus for pretreating and depositing thin...

Details Method and apparatus for pretreating and depositing thin... Method and apparatus for pretreating and depositing thin...

B - Operations, Transporting

05

D

204/167, 204/96.

B05D 3/06 (2006.01) B41M 5/24 (2006.01) C23C 14/02 (2006.01)

Patent

CA 1140078

- 1 - ABSTRACT OF THE DISCLOSURE Deposition of continuous pin-hole free tellurium films with thicknesses to less than 150A on a suitable substrate is achieved by first pre- treating the substrate prior to film deposition. Ion sputtering or bombard- ment of the substrate surface with an inert gas prior to tellurium evaporation creates a dense coverage of nucleation sites on the substrate which improves the adhesiveness and resistance to abrasion and oxidation of the deposited film while providing very thin pinhole free films of uniform thickness and desired crystallite orientation.

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