Method and apparatus for processing substrate

Details Method and apparatus for processing substrate Method and apparatus for processing substrate

C - Chemistry, Metallurgy

23

C

149/1, 32/2, 204

C23C 14/54 (2006.01) C23C 14/26 (2006.01) C23F 1/08 (2006.01) G05D 23/20 (2006.01) H01L 21/00 (2006.01)

Patent

CA 2039845

ABSTRACT OF THE DISCLOSURE A substrate such as a semiconductor wafer processing method and a substrate processing apparatus may be used in conjunction with the processing of a substrate that involves the sputtering. etching, deposit- ing, and like processes. According to the method and apparatus. the processing of a substrate can proceed under the accurately controlled temperature environment. This may be achieved by measuring the temperature and emissivity of heat from the surface of the substrate being processed, remotely as well as on the real-time basis, and correcting the temperature to reflect the actual temperature according to the emissivity as measured.

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