C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
C30B 29/06 (2006.01) C30B 13/26 (2006.01) C30B 13/32 (2006.01)
Patent
CA 2688739
A method is disclosed for producing a single crystal comprising passing a polycrystalline rod (1) through a heating region 12) to create a molten zone (3), applying a magnetic field to the molten zone, and inducing growth of a single crystal (5) upon solidification of the molten material on a single crystal seed (4). The growing single crystal is rotated in a pattern alternating between clockwise and counter-clockwise rotational directions. The method is useful for producing silicon single crystals having uniform electrical characteristics. Also disclosed is an apparatus for performing said method.
La présente invention concerne un procédé permettant de produire un monocristal comprenant le passage d'une tige polycristalline (1) à travers une région chauffante (12) afin de créer une zone fondue (3), l'application d'un champ magnétique sur la zone fondue, et l'induction de la croissance d'un monocristal (5) lors de la solidification du matériau fondu sur un germe monocristallin (4). Le monocristal en train de croître est mis en rotation en suivant un mouvement alternant entre le sens des aiguilles d'une montre et le sens contraire des aiguilles d'une montre. Le procédé permet de produire du silicium monocristallin présentant des caractéristiques électriques uniformes. L'invention concerne également un appareil permettant de mettre en uvre ledit procédé.
Jensen Leif
Larsen Theis Leth
Nielsen Anne
Petersen Jan Eyving
Vaabengaard Per
Borden Ladner Gervais Llp
Topsil Simiconductor Materials A/s
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