C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
148/1.4
C30B 15/06 (2006.01)
Patent
CA 1178176
Title - Method and Apparatus for Producing Crystalline Ribbons ABSTRACT OF THE DISCLOSURE A method and associated apparatus are disclosed for the continuous formation of single crystal silicon ribbons. A seed crystal is placed on the surface of a pool of molten silicon and pulled at a slight angle above the horizontal over the edge of a meniscus attachment member at a rate commensurate with the rate of growth of the ribbon. The for- mation of the ribbon is controlled in part by a submerged stabilizer disposed under the molten silicon below the advancing edge of the ribbon at the surface of the silicon. A thermal impedance is provided below the surface of the molten silicon to provide stability in the formation of the ribbon and to provide the proper temperature gradients conducive to the efficient formation of the ribbon from the molten material.
385601
Borden Ladner Gervais Llp
Energy Materials Corporation
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