Method and apparatus for producing high purity silicon

Details Method and apparatus for producing high purity silicon Method and apparatus for producing high purity silicon

B - Operations, Transporting

05

D

23/327, 23/389

B05D 3/14 (2006.01) C01B 33/035 (2006.01) C01B 33/039 (2006.01) C23C 16/24 (2006.01)

Patent

CA 1207985

ABSTRACT OF THE DISCLOSURE A method for producing high purity silicon is disclosed. The method comprises: forming a copper silicide alloy and positioning the alloy within an enclosure; placing a filament member within the enclosure opposite the alloy; filling the enclosure with a chemical vapor transport gas adapted for transporting silicon; heating the filament member and the alloy to temperatures sufficient to cause the gas to react with silicon at the alloy surface; and depositing the reacted silicon onto the filament member. The alloy is heated to temperatures sufficient to enable the alloy to diffusionally trap impurities, while the gas reacts with the silicon to effect depositing the silicon onto the filament member.

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