C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
204/96.09, 204/1
C23C 14/50 (2006.01) C23C 14/00 (2006.01) C23C 14/34 (2006.01)
Patent
CA 1076521
A B R I D G E M E N T A reactive sputtering process is described for producing a thin film of sputtered material on a tubular substrate which may, for example, be a solar collector tube. Uniformity of the composition of the sputtered layer at all points at the same depth in the film is achieved by preventing the movement of reactive gases through which the sputtering has already then place, from one part of the zone of sputtering to another. In one way of achieving the result the reactive gas is swept from the zone of sputtering by entraining it in a gas stream flowing across the sputtering path. In an alternative way of achieving this result the rate of flow of reactive gas is finely controlled so that it is entirely consumed in one discrete area of sputtering so that there are no components of the reactive gas remaining which are free to move to other parts of the zone of sputtering and thereby change the atmospheric conditions in it. Apparatus for carrying out there two functions is described and utilizes tubes, which may be electrodes, formed with lines of holes or openings extending parallel to the axis of the tubular substrate on which the sputtered film is to be formed.
279873
Harding Geoffrey L.
Mckenzie David R.
Window Brian
Na
University Of Sydney (the)
LandOfFree
Method and apparatus for reactive sputtering does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for reactive sputtering, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for reactive sputtering will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-531225