G - Physics – 01 – P
Patent
G - Physics
01
P
340/148, 356/200
G01P 13/00 (2006.01) G01C 19/56 (2006.01) G01P 15/08 (2006.01)
Patent
CA 2034663
A motion transducer fabricated from a semiconductor material by etched exposure and release of a resiliently suspended element. Electrical sensing and/or torquing is applied to the suspended element to produce mass or vibrational sensitivities to provide a transducer for various physical parameters. In the case of a gyroscopic transducer a mass is applied to the element and may be applied in a balanced configuration on either side. The semiconductor element and electrodes may be isolated by the use of buried PN junctions or dielectric layers, and a separately formed insulating dielectric bridge may be used to provide a support link between the suspended element and the remainder of the semiconductor material. A specific crystal orientation is useful in permitting etch control in freeing the suspended element from the remainder of the material. Suspension link stress relief is provided and a waffle construction achieved in the suspended element for use in motional transduction.
R. William Wray & Associates
The Charles Stark Draper Laboratory Inc.
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