Method and apparatus for vapor deposition

Details Method and apparatus for vapor deposition Method and apparatus for vapor deposition

C - Chemistry, Metallurgy

23

C

32/3, 117/83, 14

C23C 16/52 (2006.01) G01B 11/06 (2006.01) H01L 21/205 (2006.01)

Patent

CA 1302803

ABSTRACT OF THE DISCLOSURE A method for vapor deposition includes monitoring of growth of semiconductor layer by way of in-situ monitoring. According to the invention, in-situ monitoring is performed by irradiating light beam onto the surface of the growing layer in a direction nearly perpendicular to the surface. Growth parameters of the layer can be detected by monitoring variation of the light reflected by the surface of the layer. Growth condition in vapor deposition chamber is feedback controlled based on the detected growth parameter.

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