Method and arrangement for contact-connecting semiconductor...

H - Electricity – 01 – L

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H01L 21/60 (2006.01)

Patent

CA 2598040

The method comprises the following steps: the substrate in the form of a one- piece basic substrate (4) is prepattemed into regions corresponding to future modules, pads of the semiconductor chip (1) are then contact-connected in predetermined regions of a first area of the basic substrate (4) and on the top side (12) of the prepattemed basic substrate (4) and on one area side of the semiconductor chip (1) a first adhesive layer (16) is applied, a second adhesive layer (17) is subsequently applied to the other area side of the semiconductor chip (1), and a curing of the adhesive layers (16, 17) and a final patterning of the metallic basic substrate (4) are then effected.

Selon l'invention, le procédé consiste: à préformer le substrat sous la forme d'un substrat de base monobloc (4) en zones correspondant à de futurs modules, à connecter par contact les plots de la puce à semi-conducteur (1) dans des régions prédéterminées d'une première zone du substrat de base (4) et sur le côté supérieur (12) du substrat de base (4) préformé, et à appliquer sur un côté de la puce à semi-conducteur (1) une première couche adhésive (16), puis une seconde couche adhésive (17) sur l'autre côté de la puce à semi-conducteur (1), et, enfin, à exécuter un traitement des couches adhésives (16, 17) ainsi qu'une formation finale de motifs du substrat de base métallique (4).

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