C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
C23C 16/511 (2006.01) C08J 7/06 (2006.01) C23C 16/14 (2006.01) C23C 16/52 (2006.01) G02B 1/12 (2006.01) H01J 37/32 (2006.01)
Patent
CA 2398598
The invention provides that for each surface of a substrate (2) to be coated, a plasma is injected into a coating reactor (1) used for carrying out microwave PCVD methods, and the surface to be coated is perpendicularly orientated with regard to the direction of spreading of the corresponding plasma. Dielectric compensating elements (4a, b) are introduced into the vicinity of the microwave injection points (3) and correct for non-homogeneities resulting in the distribution of plasma thicknesses by altering the microwave field distribution.
Dans un réacteur de recouvrement (1) pour processus de dépôt par plasma et par micro-ondes, un plasma est injecté pour chaque surface d'un substrat (2) à recouvrir et la surface à recouvrir est dirigée perpendiculairement au sens de propagation du plasma concerné. Dans la zone des points d'injection des micro-ondes (3), des éléments d'ajustement diélectriques (4a, b) sont introduits et corrigent les non-uniformités intervenant dans la répartition de la densité volumique du plasma, suite à la variation de répartition du champ de micro-ondes.
Danielzik Burkhard
Kuhr Markus
Mohl Wolfgang
Glas Schott
Marks & Clerk
Schott Ag
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