C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
148/2.1
C30B 15/02 (2006.01) B01D 9/00 (2006.01)
Patent
CA 1054903
ABSTRACT A method of growing crystals in a crystallisation vessel by the periodic deposition of the crystal material from a trans- porting phase of the material in the vessel and by the partial retransfer of crystal material deposited at the site of crystal growth to the transporting phase. During the periods of deposition and retransfer, a net amount of material is deposited at the site of the crystal growth and these periods are carried in such an alternation that the formation of parasitic seeds is suppressed. The quantity of crystal material deposited on a perfect seed crystal at the site of crystal growth is larger in any period that the quantity of the crystal material retransferred to the transporting phase so long as the grown crystal is perfect. However, the quan- tity of the crystal material retransferred to the transporting phase is larger in any period than the quantity of deposited crystal material as soon as and as long as the crystal to be grown shows structural defects.
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