Method and device for treating silicon wafers

Details Method and device for treating silicon wafers Method and device for treating silicon wafers

H - Electricity

01

L

H01L 21/00 (2006.01) B05C 1/02 (2006.01) B05C 1/08 (2006.01)

Patent

CA 2709384

The invention relates to a method and device for treating silicon wafers. In a first step, the silicon wafers (22) are conveyed flat along a continuous, horizontal conveyor belt (12, 32) and nozzles (20) or the like spray an etching solution (21) from the top onto the wafers to texture them, only little etching solution (21) being applied to the silicon wafers (22) from below. In a second step, the silicon wafers (22), which are aligned as in the first step, are wetted exclusively from below with the etching solution (35) to etch-polish them.

L'invention concerne le traitement de tranches de silicium (22) selon lequel, lors d'une première opération, elles sont transportées à plat sur une bande transporteuse (12,32) horizontale et arrosées d'une solution d'attaque chimique (21) pulvérisée par des buses (20) ou similaires par le haut, à des fins de texture, seulement une faible quantité de solution d'attaque chimique (21) étant appliquée par le bas des tranches de silicium (22). Lors d'une deuxième opération, les tranches de silicium (22), orientées dans la même direction que lors de la première opération, sont polies par humidification au moyen d'une solution d'attaque chimique (35) exclusivement par le bas.

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