G - Physics – 01 – R
Patent
G - Physics
01
R
356/118, 356/188
G01R 31/26 (2006.01) G01R 31/265 (2006.01)
Patent
CA 1279934
ABSTRACT OF THE DISCLOSURE Method and measuring instrument for identifying the diffusion length of minority charge carriers for non-destructive detection of flaws and impurities in semiconductor crystal bodies. The method provides that the semiconductor crystal body is positioned between two electrolyte-filled measuring chamber halves and that the minority charge carriers of the photocurrent that results at a front side of the semiconductor crystal body due to irradiation is detected by an applied constant voltage between a backside of the semiconductor crystal body and a rear electrolyte at the backside of the semiconductor crystal body. Taking the thickness(D)of the semiconductor crystal body into consideration, the diffusion length (L) can be calculated from a mathematical equation using the quotient of the minority charge carrier current IG/IO occurring at the backside and at the front side of the semiconductor crystal body. The method provides topically resolved measurements for irradiation of the semiconductor crystal body. A measuring instrument for the implementation of the method is disclosed. The method can be used for determining the quality of semiconductor crystals.
569489
Foll Helmut
Lehmann Volker
Aktiengesellschaft Siemens
Fetherstonhaugh & Co.
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