Method and structure for inhibiting dopant out- diffusion

Details Method and structure for inhibiting dopant out- diffusion Method and structure for inhibiting dopant out- diffusion

H - Electricity

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H01L 21/30 (2006.01) H01L 21/28 (2006.01) H01L 21/285 (2006.01) H01L 23/532 (2006.01) H01L 29/06 (2006.01) H01L 29/45 (2006.01) H01L 29/49 (2006.01)

Patent

CA 1219687

ABSTRACT A method for inhibiting out-diffusion of dopants from polycrystalline or single crystal silicon substrates of high speed semiconductor devices into metal silicide conductive layers disposed on the substrate comprises interposing a refractory metal nitride layer,between the doped silicon substrate and the refractory metal silicide conductive layer. Dopant out-diffusion is further retarded, and contact resistance lowered, by adding a thin layer of refractory metal between the refractory metal nitride layer and the silicon substrate.

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