Method and system for improving a transistor model

Details Method and system for improving a transistor model Method and system for improving a transistor model

G - Physics

06

F

G06F 19/00 (2006.01) G01R 31/26 (2006.01) G01R 31/28 (2006.01) G06F 17/50 (2006.01)

Patent

CA 2318330

The present invention relates to an improved system for simulating bipolar transistors with a variation in Early voltage as a function of collector/emitter bias voltage. The simulation is based upon a standard Gummel- Poon model and is improved by an Early voltage extension, where the constant Early voltage is replaced by an Early voltage that is divided into several regions. The Early voltage is adjusted to fit the actual variations of the measured Early voltage characteristics of a bipolar transistor. The Early voltage within each region is used for calculating the bipolar transistors base charge (qb) which then is used to simulate the performance of the bipolar transistor. The regions may be linked together by choice of boundary conditions.

L'invention concerne un système amélioré destiné à simuler des transistors bipolaires, affectés d'une variation de tension Early en fonction d'une tension de polarisation d'un collecteur/émetteur. La simulation est basée sur une norme de Gummel-Poon et est amélioré par extension de la tension Early, la tension Early constante étant remplacée par une tension Early divisée en plusieurs régions. La tension Early est réglée de manière à correspondre aux variations réelles des caractéristiques de tension Early mesurées d'un transistor bipolaire. La tension Early de chaque région est utilisée pour calculer la charge de base (q¿b?) des transistors bipolaires qui est ensuite utilisée pour simuler la performance du transistor bipolaire. On peut établir des liaisons entre régions revenant à un choix d'états de limites.

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