C - Chemistry – Metallurgy – 23 – F
Patent
C - Chemistry, Metallurgy
23
F
C23F 1/02 (2006.01) C25D 5/02 (2006.01) C25F 3/02 (2006.01) C25F 3/14 (2006.01) H01L 21/77 (2006.01) H05K 3/07 (2006.01)
Patent
CA 2264908
In a method for anisotropic etching of a structure in an electrically conductive substance to be etched, use is made of an etchant which in concentrated solution is usable for isotropic etching of structures in the substance to be etched. The substance to be etched is contacted with the etchant in a solution which is so diluted that the etchant is unusable for isotropic etching. The etchant is subjected, adjacent to the substance to be etched, to an electric field of such a strength that anisotropic etching of the substance to be etched is accomplished. Moreover, an etching fluid is described, comprising an etchant in dilute solution, in which the etchant is present in a concentration of 200 mM at most, and use of such an etching fluid for making structures which are 50 µm or less is also described.
Dans un procédé de gravure anisotrope d'une structure dans une substance électroconductrice, on utilise un agent de gravure qui, en solution concentrée, permet de réaliser une gravure isotrope de structures dans la substance à graver. Cette substance est mise en contact avec l'agent de gravure dans une solution qui est diluée de sorte que l'agent de gravure ne puisse être utilisé dans la gravure isotrope. L'agent de gravure est soumis, à côté de la substance à graver, à un champ électrique d'une intensité permettant de réaliser la gravure anisotrope. L'invention concerne, en outre, un fluide de gravure comprenant un agent de gravure dans une solution diluée, cet agent étant présent dans une concentration maximale de 200 mM, ainsi que l'utilisation de ce fluide de gravure pour fabriquer des structures égales ou inférieures à 50 mu m.
Heidari Babak
Olsson Lennart
Gowling Lafleur Henderson Llp
Obducat Ab
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