C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
204/96.14
C23C 14/34 (2006.01) C23C 14/00 (2006.01) C23C 14/06 (2006.01)
Patent
CA 1309057
ABSTRACT OF THE DISCLOSURE A carbon film producing method utilizing a reactive sputtering process for projecting carbon particles from a graphite target electrode to deposite a very thin layer on a substrate. The reactive sputtering process is performed at a predetermined pressure in an atmosphere of hydrogen gas mixed at a predetermined ratio to another kind of gas. - 32 -
528655
Kabushiki Kaisha Meidensha
Robic
Watanabe Misuzu
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