G - Physics – 01 – N
Patent
G - Physics
01
N
324/25, 73/69
G01N 27/20 (2006.01) C30B 33/00 (2006.01) G01N 27/04 (2006.01) H01L 21/322 (2006.01) H01L 29/167 (2006.01)
Patent
CA 1138674
ABSTRACT This invention relates to a method for determining the oxygen content of Czochralski grown semiconductor rods. The method includes the steps of cutting a portion close to an end of a stabilized rod and measuring its resistiv- ity; annealing this portion at a temperature in the range of 600 to 900°C for a sufficient period of time in a nitro- gen atmosphere; and chemically etching and measuring the change in resistivity of the position and thereby deduce the initial oxygen concentration of the rod. These steps can be repeated for other adjacent portions of the rod un- til the desired change in resistivity increment is found. For wafers used in unipolar devices, the oxygen content should be ? 30 ppmA. In this instance, the annealing operation is performed at 750°C for 6 hours from the tail of the rod until the measured resistivity increment indi- cates that a noticeable donor ND generation has been per- formed. This figure shows that from 30 ppmA (in these annealing conditions), the donor generation exceeds 1.1014 donors per cm3. This value corresponds to 3 .OMEGA..cm for a p-type silicon rod of 19 .OMEGA..cm.
351200
Cazcarra Victor
Schwab Andre
Zunino Patrick
International Business Machines Corporation
Na
LandOfFree
Method for characterizing the oxygen contents of czochralski... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for characterizing the oxygen contents of czochralski..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for characterizing the oxygen contents of czochralski... will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-764311