Method for coating substrates with silicon based compounds

Details Method for coating substrates with silicon based compounds Method for coating substrates with silicon based compounds

C - Chemistry, Metallurgy

23

C

C23C 14/38 (2006.01) C23C 14/10 (2006.01) C23C 14/35 (2006.01) H01J 37/34 (2006.01)

Patent

CA 2069329

A method of depositing thin films of silicon based compounds, particularly silicon dioxide, by cathode reactive sputtering utilizes a rotating cylindrical magnetron (20) driven by a d.c, potential (30}. The result is a technique of forming a uniform film on large substrates (12) with high deposition rates. Arcing normally associated with sputtering troublesome dielectric coatings such as silicon oxides is substantially eliminated.

Selon un procédé de déposition de minces pellicules de composés à base de silicium, notamment du dioxyde de silicium, par pulvérisation réactive cathodique, on utilise un magnétron cylindrique rotatif (20) entraîné par un potentiel de courant direct (30). On obtient ainsi une technique de formation d'une pellicule uniforme sur des substrats (12) de grandes dimensions à des vitesses élevées de déposition. On élimine la formation d'arcs qui accompagne normalement la pulvérisation de revêtements diélectriques difficiles tels que les oxydes de silicium.

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