Method for continuous and maskless patterning of structured...

G - Physics – 03 – F

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G03F 7/09 (2006.01) G02F 1/1343 (2006.01) G03F 7/00 (2006.01) G02F 1/1339 (2006.01)

Patent

CA 2315026

A method of selectively patterning a structured substrate without using a mask is disclosed. The method includes the steps of providing a surface having a plurality of protrusions, coating the surface with a filler material thick enough so that the protrusions are covered, and planarizing the filler coating. The filler material is thereafter partially removed in a uniform fashion to expose only those portions of the protrusions to be modified. After modifying the protrusions by, for example, deposition or etching, the remaining filler material may be removed, resulting in a structured substrate selectively modified or patterned at its protrusions.

La présente invention concerne un procédé permettant de former des motifs de façon sélective sur un substrat structuré sans devoir utiliser de masque. Ledit procédé consiste à former une surface munie de plusieurs protubérances, à recouvrir la surface munie de plusieurs protubérances d'une matière de remplissage assez épaisse pour couvrir les protubérances, et à aplanir le revêtement de remplissage. On enlève ensuite partiellement la matière de remplissage de façon uniforme afin de n'exposer que les parties des protubérances devant être modifiées. Après avoir modifié ces parties par dépôt ou par gravure, par exemple, on enlève la matière de remplissage restante, et l'on obtient un substrat structuré sélectivement modifié ou doté d'un motif sur ses protubérances.

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