Method for control of etch profile

Details Method for control of etch profile Method for control of etch profile

C - Chemistry, Metallurgy

23

F

204/96.05

C23F 1/02 (2006.01) C23F 1/12 (2006.01) H01L 21/308 (2006.01) H01L 21/311 (2006.01)

Patent

CA 1261785

ABSTRACT METHOD FOR ETCH PROFILE CONTROL A method for precisely controlling the profile of an opening etched in a layer of material, for example, an insulating layer. In one embodiment, wherein a silicon dioxide layer is reactive ion etched through a photoresist mask, the reactive species is changed during the etching process to change the slope of the opening, the upper sidewall portion of the opening having a shallow slope and the lower sidewall portion of the opening having a steep slope.

504799

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