Method for controlling scale formation and deposition in...

C - Chemistry – Metallurgy – 02 – F

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C02F 5/10 (2006.01) C02F 5/12 (2006.01) C02F 5/14 (2006.01) C08F 216/14 (2006.01)

Patent

CA 2440435

Novel water-soluble or water-dispersible polymers useful for inhibiting the formation and deposition of scale forming moieties in aqueous systems comprising repeat units characterized by the Formula I: R1 | *--[-E-]c-**-[- CH2-C-]d-* *-[-F-]e-* | G | O | R2 | XZ Wherein E is the repeat unit remaining after polymerization of an ethylenically unsaturated compound; preferably, a carboxylic acid, sulfonic acid, phosphonic acid, or amide form thereof or mixtures thereof. R1 is H or lower (C1-C4) alkyl. G is -CH2- or -CHCH3-; R2 is -(-CH2-CH2-O)n- or -(-CH2-CHCH3-O)m- where n and m range from about 1 to 100, preferably n is greater than 10 and m ranges from about 1 to 20. X is an anionic radical selected from the group consisting of SO3, PO3, or COO; Z is H or hydrogens or any water soluble cationic moiety which counterbalances the valence of the anionic radical X, including but not limited to Na, K, Ca, or NH4. F, when present, is a repeat unit having the structure of Formula II: R4 | *-[-CH2-C-]-* | CH2 | O | R5 | XZ wherein X and Z are the same as in Formula I. R4 is H or lower (C1-C4) alkyl . R5 is hydroxy substituted alkyl or alkylene having from about 1 to 6 carbon atoms.

L'invention porte sur de nouveaux polymères hydrosolubles ou hydrodispersibles servant à inhiber la formation et le dépôt de fragments entartrants dans des systèmes aqueux, et comportant des unités répétitives caractérisées par la Formule I dans laquelle: E est une unité répétitive restant après la polymérisation d'un composé non saturé en éthylène, de préférence un acide carboxylique, un acide sulfonique, un acide phosphonique, ou leur forme amidée ou leurs mélanges; R1 est H ou (C1-C4) alkyle inférieur; G est -CH2- ou -CHCH3-; R2 est -(-CH2-CH2-O)n- ou -(-CH2-CHCH3-O)m- où n et m sont compris entre environ 1 et 100, n étant de préférence supérieur à 10 et m, compris entre environ 1 et 20; X est un radical anionique choisi parmi SO3, PO3, ou COO; Z est H ou hydrogène ou tout fragment cationique hydrosoluble qui contrebalance la valence du radical anionique X, dont non limitativement Na, K, Ca, ou NH4; F, si présent, est une unité répétitive présentant la structure de la Formule II dans laquelle: X et Z sont comme dans la Formule I; R4 est H ou (C1-C4) alkyle inférieur; et R5 est un alkyle ou un alkylène à substitution hydroxy à 1 à 6 atomes de carbone.

LandOfFree

Say what you really think

Search LandOfFree.com for Canadian inventors and patents. Rate them and share your experience with other people.

Rating

Method for controlling scale formation and deposition in... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for controlling scale formation and deposition in..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for controlling scale formation and deposition in... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFCA-PAI-O-1658961

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.