Method for curing defects in the fabrication of a composite...

B - Operations – Transporting – 01 – D

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B01D 65/10 (2006.01) B01D 53/22 (2006.01) B01D 67/00 (2006.01) B01D 71/02 (2006.01) C01B 3/50 (2006.01)

Patent

CA 2519766

The present invention relates to a method for curing a defect in the fabrication of a composite gas separation module and to composite gas separation modules formed by a process that includes the method. The present invention also relates to a method for selectively separating hydrogen gas from a hydrogen gas containing gaseous stream. The method for curing a defect in the fabrication of a composite gas separation module includes depositing a first material comprising palladium over a porous substrate, thereby forming a coated substrate, wherein the coated substrate contains at least one defect. Then, the coated substrate can be selectively surface activated proximate to the defect, thereby forming at least one selectively surface activated region of the coated substrate. A second material can be then preferentially deposited on the selectively surface activated region of the coated substrate, whereby the defect is cured.

La présente invention concerne, d'une part un procédé permettant de supprimer un défaut affectant la fabrication d'un module de séparation de gaz composite, et d'autre part un module de séparation de gaz composite réalise selon un processus incluant le procédé. L'invention concerne également un procédé de séparation sélective de l'hydrogène gazeux dans un courant gazeux contenant de l'hydrogène gazeux. Le procédé de réparation d'un défaut dans la fabrication d'un module de séparation de gaz composite implique de déposer sur un substrat poreux un premier matériau comprenant du palladium, ce qui donne un substrat revête, lequel substrat revêtu contient au moins un défaut. Ensuite, la surface du substrat revêtu peut être sélectivement activée à proximité du défaut, formant ainsi au moins une région de substrat revêtu dont la surface est sélectivement activée. Un second matériau peut alors être préférentiellement déposé sur la région de substrat revêtu dont la surface est sélectivement activée, ce qui fait que le défaut est supprimé.

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