H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 39/02 (2006.01) C30B 29/16 (2006.01) H01L 39/24 (2006.01)
Patent
CA 2121315
Abstract of the Disclosure: A method for depositing a thin film of a material on an oxide thin film having a perovskite type crystal structure formed on a substrate comprising steps of depositing a seed layer of a single crystal of the material having an extremely thin thickness at a relatively high substrate temperature on the oxide thin film having a perovskite type crystal structure and depositing a thin film of the material on the seed layer at a lower substrate temperature.
Bereskin & Parr
Sumitomo Electric Industries Ltd.
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