Method for depositing elemental silicon from the gaseous phase

Details Method for depositing elemental silicon from the gaseous phase Method for depositing elemental silicon from the gaseous phase

C - Chemistry, Metallurgy

23

C

117/85, 148/3.7

C23C 16/00 (2006.01) C01B 33/035 (2006.01) C23C 16/22 (2006.01) C23C 16/44 (2006.01) C23C 16/52 (2006.01)

Patent

CA 1091992

ABSTRACT OF THE DISCLOSURE The depositing of Si upon a rod-shaped carrier which is heated in a flowing reaction gas adapted to separate Si and deposit it upon the surface of the said carrier, the flow of the said reaction gas being so regulated that the rate of deposition per cm2 of the carrier surface remaining constan?.

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