Method for depositing epitaxial monocrystalline...

Details Method for depositing epitaxial monocrystalline... Method for depositing epitaxial monocrystalline...

H - Electricity

01

L

356/178

H01L 21/441 (2006.01) C30B 19/06 (2006.01) H01L 21/208 (2006.01)

Patent

CA 1116312

ABSTRACT OF THE DISCLOSURE A method of depositing a plurality of epitaxial monocrystalline layers of semiconductive materials onto an individual substrate of a plural- ity of substrates via the sliding liquid phase epitaxy technique whereby the spacing between respective melt-containing chambers and respective substrate- receiving recesses are substantially equal to one another and, during the deposition stage, the temperature of all melts located on respective sub- strates is lowered a substantially identical amount so that a corresponding epitaxial layer grows on each such substrate.

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