H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/04 (2006.01) B81B 3/00 (2006.01) C23C 16/32 (2006.01) C23C 16/52 (2006.01) G02B 26/08 (2006.01)
Patent
CA 2546081
A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.
L'invention concerne une méthode de dépôt d'un film céramique, en particulier un film en carbure de silicium, sur un substrat, dans lequel la contrainte résiduelle, le gradient de contrainte résiduelle, et la résistivité sont contrôlés. L'invention concerne des substrats comportant d'un film déposé présentant ces propriétés contrôlées et des dispositifs, en particulier des dispositifs MEMS et NEMS, présentant de substrats dotés de films possédant ces propriétés.
Dunning Jeremy L.
Fu Xiao-An
Mehregany Mehran
Zorman Christian A.
Case Western Reserve University
Ridout & Maybee Llp
LandOfFree
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