Method for deposition and etching of thin films for...

Details Method for deposition and etching of thin films for... Method for deposition and etching of thin films for...

H - Electricity

01

L

356/177, 356/178

H01L 21/465 (2006.01)

Patent

CA 2029518

ABSTRACT OF THE DISCLOSURE The present invention relates to a method for deposition or etching of thin films for microelectronic applications. In particular, it relates to the low temperature deposition of high quality silicon dioxide thin films suitable for gate oxide in MOS technology for VLSI applications. The method solves the problems derived from the harmful effects of energetic particle bombardment and photonic radiation emanated from the plasma, while at the same time makes use of the active species generated in the plasma before they are significantly deactivated, resulting in the achievement of high quality oxide films with low bulk and interface defect densities as well as high breakdown strengths.

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