C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
C23C 16/26 (2006.01) C23C 16/04 (2006.01) C23C 16/52 (2006.01) C30B 29/04 (2006.01)
Patent
CA 2103426
METHOD FOR DETERMINING THICKNESS OF CHEMICAL VAPOR DEPOSITED LAYERS Abstract The thickness of a layer of material deposited by chemical vapor deposition, especially a diamond layer, is monitored by providing at least one substrate on which the material is deposited, with at least one perforation of a predetermined size therein. The relationship between the thickness of the layer formed in said perforation and the thickness of the layer formed on the substrate surface is determined, so that the thickness of the surface layer can be determined from the thickness of the layer formed in the perforation.
Anthony Thomas R.
Fleischer James F.
Woodruff David W.
Company General Electric
Craig Wilson And Company
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