Method for developing a cop resist used in x-ray lithography

Details Method for developing a cop resist used in x-ray lithography Method for developing a cop resist used in x-ray lithography

H - Electricity

05

G

358/11

H05G 1/00 (2006.01) G03F 7/20 (2006.01)

Patent

CA 1136775

ABSTRACT OF THE DISCLOSURE Apparatus and method are provided for developing a COP resist used in x-ray lithography apparatus. The lithography apparatus uses an x-ray target made of tungsten and the apparatus is operated to generate the tungsten M-line, this line being at a wavelength which will be absorbed by the resist normally used in lithography. To develop the resist, which was initially designed for use in an electron beam lithography, a developing method is used in which an initial short development with a high concentration is first carried out followed by a longer, full development with a concentration which is approximately the lowest at which complete development will take place.

383971

Affiliated with

Also associated with

Rating

Method for developing a cop resist used in x-ray lithography does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for developing a cop resist used in x-ray lithography, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for developing a cop resist used in x-ray lithography will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-384163