Method for doping tin oxide

Details Method for doping tin oxide Method for doping tin oxide

H - Electricity

01

C

31/107

H01C 7/00 (2006.01) H01C 17/065 (2006.01)

Patent

CA 1204588

TITLE METHOD FOR DOPING TIN OXIDE ABSTRACT OF THE DISCLOSURE The invention is directed primarily to a method of doping tin oxide with Ta2O5 and/or Nb2O5 using pyrochlore-related compounds derived from the system SnO-SnO2-Ta2O5-Nb2O5 for use in thick film resistor compositions. The invention is also directed to thick film resistors containing the above-described pyrochlore-related compounds and to various compositions and methods for making such thick film resistors.

429357

Affiliated with

Also associated with

Rating

Method for doping tin oxide does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for doping tin oxide, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for doping tin oxide will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1222502