Method for dry-etching aluminum and aluminum alloys

Details Method for dry-etching aluminum and aluminum alloys Method for dry-etching aluminum and aluminum alloys

C - Chemistry, Metallurgy

23

F

148/27

C23F 1/00 (2006.01) C09K 13/10 (2006.01) C23F 4/00 (2006.01) H01L 21/3213 (2006.01)

Patent

CA 1116986

METHOD FOR DRY-ETCHING ALUMINUM AND ALUMINUM ALLOYS Abstract of the Disclosure The specification discloses a method for dry-etching A? and A? alloys. The etching method involves producing a plasma discharge in a mixed gas comprising boron trichloride and freon or other source of fluorine in the discharge and/or oxygen incorporated therein and patterning A? or an A? alloy by the produced discharge. In this dry etching method, the etch rate of A? or an A? alloy can be remarkably improved over the etch rate attainable according to the conventional techniques, and the difference of the etch rate between A? or an A? alloy and other materials can be remarkably increased. The patterned A? or A? alloys thereby produced can be used in the production of semiconductor devices.

328768

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